Gunn Diodes: The MwT-GK Gunn Diode is targeted at CW and pulsed K-band (18-26.5 GHz) frequency source applications. Typical Applications for this device include Motion Detection and Surveillance, Microwave Transmitter and Receiver, Military Radar, Gunn Diode Oscillators and Radar Detectors.Typical performance at 25&am...

Gunn Diodes The MwT-GK Gunn Diode is targeted at CW and pulsed K-band (18-26.5 GHz) frequency source applications. Typical Applications for this device include Motion Detection and Surveillance, Microwave Transmitter and Receiver, Military Radar, Gunn Diode Oscillators and Radar Detectors. Part NumberFreq (GHz)P-1dB (...

APPLICATION NOTES AND SCREENING DOWNLOADS MwT GaAs device technology. MwT-7 Replaces NEC710 Tech Note. Evaluation of the Effects of Hydrogen on MwT Fets. Package Application Notes (70, 71, 73). Some products also available in NEW SOT89 package. Visual Level 1 Criteria - Commercial Applications. Visual Level 3 Criteria...

GaAs FET and pHEMT DevicesGaAs FETs / pHEMTs RF Properties (Typical performance at 25°C)Ultra Linear, High Dynamic Range, Low Phase NoiseGaAs Process is Approved for Space Applications with Proven ReliabilityCommercial, Industrial, Military, and Space Grade100% Wafer Bond Pull, Die Shear, Wafer DC Burn In, and ...

MMICs型号增益模块放大器对于有不同输出功率和OIP3频率有很广泛的增益效果，其目的是追求较低的直流功耗，创造更高的增益从而达到更好的线性效果.特点： 运用：1.5-8000 MHz 1.CDMA,GSM,PCS,WCDMA,TDSCDMA,DCS,UMTS 2.内部匹...

MMICs型号增益模块放大器对于有不同输出功率和OIP3频率有很广泛的增益效果，其目的是追求较低的直流功耗，创造更高的增益从而达到更好的线性效果.特点： 运用：1.5-8000 MHz 1.CDMA,GSM,PCS,WCDMA,TDSCDMA,DCS,UMTS 2.内部匹...