百叶窗图片载入中
img
产品中心
PRODUCT

产品中心

您的位置:网站首页>>产品中心
GaN 放大器MMIC
GaN 放大器MMIC

WiMAX GaN based RF Power Amplifiers ModelCaseFreqLinearGain InputOutputP3dBPoutIP3DC CodeRangeGainFlatnessReturnReturn @ Current LossLoss 2.5% EVMTypTyp/Max Sealed Typ/MinTyp/MaxTypTypTypTyp NewQFN(GHz)(dB)(dB)(dB)(dB)(dBm)(dBm)(dBm)(mA)MGA-242740-0222.4-2.715.0 / 12.01.0 / 1.58840334050 /400MGA-333840-0...

无线放大器MMIC
无线放大器MMIC

Miniature, Low Cost, SMT, Flange, & Leadless OptionsMiniature, High Reliability, Hermetic SMT OptionsLow Noise, High Linearity, and Broadband OptionsSuitable for High Dynamic Range LNA ApplicationsSuitable for High Linear Driver Amp Gain StagesLow VSWR for Improved Cascade PerformanceSingle Voltage Supply and Low C...

Hybrid Amplifier Modules
Hybrid Amplifier Modules

Hybrid ModulesMiniature Drop-In Hybrid AmplifiersLow Noise, High Gain, and High Power OptionsGain Block, Temp Comp, and Regulator OptionsLow VSWR for Improved Cascade PerformanceSingle Voltage Supply and Low Current DesignUses MwT’s Space-Qualified GaAs Devices and Thin Film Substrates100% Eutectic Assembly T...

Low Cost Packaged FETs
Low Cost Packaged FETs

Low Cost Packages Amplifiers ModelPackage Available Sealed / HermeticGate Width / Length umGate Layout MethodGate Drain Source Bond Pads QtyChip Thick-ness & VIA Hole mil, y/nS.S. Gain @12GHz Typ/Max dBN.F. @12Ghz Typ/Max dBGa @ N.F @12GHz Typ/Min dBP-1dB @12GHz Typ dBmIP3 @12GHz Typ dBmNominal Chip Size um - umIde...

封装FET
封装FET

MwT-1789HL Application Note MwT-1789LN Application Note MwT-17Q3 Application Note ModelPackageGateGate GateChip S.S. GainN. F.Ga @P-1dBIP3NominalIdeal AvailableWidth /LayoutDrainThick-@12GHz @12GHz N.F@ @ Chip Circuit Sealed / LengthMethodSourcenessTyp/MinTyp/Max@12GHz 12GHz12GHzSize Hermetic Bond Pads& VIA H...

Copyright © 2018 www.tac-elec.com  All Rights Reserved.

技术支持:牵牛建站 | 中科商务网  | 网站管理