封装FET

MwT-1789HL Application Note MwT-1789LN Application Note MwT-17Q3 Application Note ModelPackageGateGate GateChip S.S. GainN. F.Ga @P-1dBIP3NominalIdeal AvailableWidth /LayoutDrainThick-@12GHz @12GHz N.F@ @ Chip Circuit Sealed / LengthMethodSourcenessTyp/MinTyp/Max@12GHz 12GHz12GHzSize Hermetic Bond Pads& VIA H...