GaAs FETs

发布时间：2025-5-2 9:23:2 加入购物车

APPLICATION NOTES AND SCREENING DOWNLOADS
 MwT GaAs device technology.
 MwT-7 Replaces NEC710 Tech Note.
 Evaluation of the Effects of Hydrogen on MwT Fets.
 Package Application Notes (70, 71, 73).  Some products also available in NEW SOT89 package.
 Visual Level 1 Criteria - Commercial Applications.
 Visual Level 3 Criteria - Military Standard Applications.
 Device Handling Procedure, Idss Bin Selection Instructions, Idss Bin Accuracy.
 MwT-LP7 Low Phase Noise Application Notes for DRO Applications
 MwT Standard Wafer Evaluation Procedure
 MwT-1789HL Application Note
 MwT-1789LN Application Note
 MwT-17Q3 Application Note
 MTBF Plot For MwT GaAs Fets
 Bias Application Note for MwT-LN180 and MwT-LN240 NEW

 

 

GaAs FETs / pHEMTs RF Properties (Typical performance at 25°C)
(DC Properties Listed On Page 2)

 

超线性，高动态范围，低相噪 GaAs Process is Approved for Space Applications with Proven Reliability 商业，工业，通信 100% Wafer Bond Pull, Die Shear, Wafer DC Burn In, and Bake Tests in Evaluation per MIL-PRF-38534 100% Die Probe Test with Data Recorded for Shipment 100% Visual Performed (Level 1, 3, or 4) before Shipment 100% Idss Match to Provide Performance Consistency RF Sample Test Capability Available Upon Request Standard and Custom Device Specifications High-Rel and Space-Rel Screening Options Available RoHS (lead-free) Compliant Product Available