GaAs FETs / pHEMTs RF Properties (Typical performance at 25°C)
-
Ultra Linear, High Dynamic Range, Low Phase Noise
-
GaAs Process is Approved for Space Applications with Proven Reliability
-
Commercial, Industrial, Military, and Space Grade
-
100% Wafer Bond Pull, Die Shear, Wafer DC Burn In, and Bake Tests in Evaluation per MIL-PRF-38534
-
100% Die Probe Test with Data Recorded for Shipment
-
100% Visual Performed (Level 1, 3, or 4) before Shipment
-
100% Idss Match to Provide Performance Consistency
-
RF Sample Test Capability Available Upon Request
-
Standard and Custom Device Specifications
-
High-Rel and Space-Rel Screening Options Available
-
RoHS (lead-free) Compliant Product Available